Conductivity type: | Р Type (Boron) |
Orientation | 100 ±2° |
Carbon content | Less than 5х1016 at. cm3 |
Oxygen content | Less than 1х1018 at.cm3 |
Resistance | 0,5 ÷ 3 Ω/сm |
Shape | Full square 100х100 from Ф 135 mm Pseudo-square 100х100 from Ф125 mm Pseudo-square 125х125 from Ф150 mm |
Conductivity type: | Р Type (Boron) |
Orientation | 100 and 111 ±2° |
Carbon content | Less than 2.5х1016 at.cm3 |
Oxygen content | Less than 1х1018 at.cm3 |
Resistance | 0,05 ÷ 45 ± 20% Ω/сm |
Shape | Grinded cylinder |
Diameter | 76,2 mm, 100 mm, 125 mm, 150 mm |
Diameter mm (inch) | 76.2 (3”) | 100 (4”) | 125 (5”) | 150 (6”) | |
Wafer thickness(μm) | standard | >350 | >400 | >440 | >500 |
minimum | 300 | 350 | 380 | 420 | |
Through-the-thickness accuracy(μm) | standard | ±15 | ±20 | ±20 | ±20 |
Thickness deviation TTV (μm) | maximum | 10 | 15 | 20 | 25 |
standard | <7 | <10 | <10 | <12 | |
ИWafer warp (μm) | maximum | 30 | 35 | 40 | 45 |
standard | <15 | <15 | <20 | <25 |